Electron Beam Induced Impurity Electro-Migration in Unintentionally Doped GaN
- 期刊名称MRS Proceedings
- 作者Toth, M.; Fleischer, K.; Phillips, M. R.
- 卷第537卷
- 电子ISSN1946-4274
- 文件大小1495.31KB
- 发表时间1998-1
- DOI10.1557/proc-537-g3.30
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