[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (1998.12.6-1998.12.9)] International Electron Devices Meeting 1998 Technical Digest (Cat No 98CH36217) IEDM-98 - Author index
- 文件大小722.03KB
- 发表时间1998
- DOI10.1109/iedm.1998.746233
[IRE 1977 International Electron Devices Meeting - ()] 1977 International Electron Devices Meeting - Integrated electron devices in medicineMeindl, J.D. · 1977
[IRE 1977 International Electron Devices Meeting - ()] 1977 International Electron Devices Meeting - Power GaAs FETsWisseman, W.R. · 1977
[IRE 1977 International Electron Devices Meeting - ()] 1977 International Electron Devices Meeting - Session 3 Power devices—ThyristorsHower, P.L. · 1977
[IRE 1977 International Electron Devices Meeting - ()] 1977 International Electron Devices Meeting - Session 15 Power devices—ModelingAdler, M.S. · 1977
[IRE 1977 International Electron Devices Meeting - ()] 1977 International Electron Devices Meeting - Delayed gassing in electron tubesHull, J.F. · 1977
[IRE 1977 International Electron Devices Meeting - ()] 1977 International Electron Devices Meeting - Session 25 Solid state imaging devicesCampana, S. · 1977
[IRE 1977 International Electron Devices Meeting - ()] 1977 International Electron Devices Meeting - Geometry effects of small MOSFET devicesGaensslen, F.H. · 1977
[IRE 1977 International Electron Devices Meeting - ()] 1977 International Electron Devices Meeting - Session 22 Detectors and transducersWilliams, B. · 1977
Memory technology for post CMOS eraBrewer, J.E.; Zhirnov, V.V.; Hutchby, J.A. · 2005
High-performance interconnects: an integration overviewHavemann, R.H.; Hutchby, J.A. · 2001
Monolithic integration of complementary HBTs by selective MOVPESlater, D.B.; Enquist, P.M.; Najjar, F.E.; Chen, M.Y.; Hutchby, J.A. · IEEE Electron Device Letters · 1990
Review of high efficiency multijunction and point contact GaAs solar cell developmentJ.A. Hutchby; M.L. Timmons; P.K. Chiang; M.F. Lamorte; G.G. Fountain · 1987
High-performance p-n-p AlGaAs/GaAs heterojunction bipolar transistors: A theoretical analysisHutchby, J.A. · 1986
[IRE 1979 International Electron Devices Meeting - ()] 1979 International Electron Devices Meeting - Plenary session—Invited papersHutchby, J.A. · 1979
High-efficiency tandem solar cells on single- and poly-crystalline substratesJ.A. Hutchby; M.L. Timmons; R. Venkatasubramanian; P.R. Sharps; R.A. Whisnant · 1994
DC performance of GaAs/AlxGa1-xAs p-n-p heterojunction bipolar transistors grown by OMVPEDe Lyon, T.; Casey, H.C., Jr.; Enquist, P.M.; Hutchby, J.A. · 1988