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[IEEE 1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98 - Kyoto, Japan (22-26 June 1998)] 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) - Using dopant activation of implanted wafers for low temperature (400°C-600°C) measurement in CVD equipment design

[IEEE 1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98 - Kyoto, Japan (22-26 June 1998)] 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) - Using dopant activation of implanted wafers for low temperature (400°C-600°C) measurement in CVD equipment design

Borland, J.O.; Galewski, C.
  • 作者Borland, J.O.; Galewski, C.
  • 卷第2卷
  • 文件大小212.53KB
  • 发表时间1998
  • DOI10.1109/iit.1998.813903
  • 页码1211-1213
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