[IEEE 1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98 - Kyoto, Japan (22-26 June 1998)] 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) - Using dopant activation of implanted wafers for low temperature (400°C-600°C) measurement in CVD equipment design
Borland, J.O.; Galewski, C.
- 作者Borland, J.O.; Galewski, C.
- 卷第2卷
- 文件大小212.53KB
- 发表时间1998
- DOI10.1109/iit.1998.813903
- 页码1211-1213