Crystal growth of high quality hybrid GaAs heteroepitaxial layers on Si substrate by metalorganic chemical vapor deposition and liquid phase epitaxy
- 作者S. Saravanan; K. Jeganathan; K. Baskar; T. Jimbo; T. Soga; M. Umeno
- 卷第192卷
- 印刷ISSN0022-0248
- 文件大小282.76KB
- 发表时间1998
- DOI10.1016/s0022-0248(98)00409-6
- 页码23-27
同期刊推荐
Editorial BoardJournal of Crystal Growth · 1986
Editors' prefaceJournal of Crystal Growth · 1986
Crystal growth research in ChinaMinhua, Jiang · Journal of Crystal Growth · 1986
Segregation in garnet LPEKlages, C.-P.; Tolksdorf, W. · Journal of Crystal Growth · 1986
Editorial BoardJournal of Crystal Growth · 1990
PrefaceJournal of Crystal Growth · 1990
The dynamic roughening of crystalsBalibar, S.; Gallet, F.; Rolley, E. · Journal of Crystal Growth · 1990
Surface melting of small crystalsNenow, D.; Trayanov, A. · Journal of Crystal Growth · 1990