Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence
- 作者A. S. Usikov; V. V. Tret’yakov; V. V. Lundin; Yu. M. Zadiranov; B. V. Pushnyi; S. G. Konnikov
- 卷第25卷
- 期第4期
- 印刷ISSN1063-7850
- 电子ISSN1090-6533
- 文件大小425.49KB
- 发表时间1999-04
- DOI10.1134/1.1262443
- 页码253-256
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