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A molecular dynamics simulation of ultrathin oxide films on silicon: Growth by thermal O atoms and sputtering by 100 eV Ar+  ions

A molecular dynamics simulation of ultrathin oxide films on silicon: Growth by thermal O atoms and sputtering by 100 eV Ar+ ions

Kubota, A.; Economou, D.J.
  • 作者Kubota, A.; Economou, D.J.
  • 卷第27卷
  • 期第5期
  • 印刷ISSN0093-3813
  • 电子ISSN1939-9375
  • 文件大小449.97KB
  • 发表时间1999
  • DOI10.1109/27.799820
  • 页码1416-1425
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