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[IEEE International Electron Devices Meeting 1999. Technical Digest - Washington, DC, USA (5-8 Dec. 1999)] International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) - Current and future development of high power MOS devices

[IEEE International Electron Devices Meeting 1999. Technical Digest - Washington, DC, USA (5-8 Dec. 1999)] International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) - Current and future development of high power MOS devices

Ohashi, H.

作者Ohashi, H.
文件大小359.81KB
发表时间1999
DOI10.1109/iedm.1999.823875
页码185-188

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