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Deep level analysis of radiation-induced defects in Si crystals and solar cells

Deep level analysis of radiation-induced defects in Si crystals and solar cells

Yamaguchi, Masafumi; Khan, Aurangzeb; Taylor, Stephen J.; Ando, Koshi; Yamaguchi, Tsutomu; Matsuda, Sumio; Aburaya, Takashi
  • 期刊名称Journal of Applied Physics
  • 作者Yamaguchi, Masafumi; Khan, Aurangzeb; Taylor, Stephen J.; Ando, Koshi; Yamaguchi, Tsutomu; Matsuda, Sumio; Aburaya, Takashi
  • 卷第86卷
  • 期第1期
  • 印刷ISSN0021-8979
  • 文件大小457.35KB
  • 发表时间1999
  • DOI10.1063/1.370698
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