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[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - Full-band Monte Carlo device simulation of a Si/SiGe-HBT with a realistic Ge profile

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - Full-band Monte Carlo device simulation of a Si/SiGe-HBT with a realistic Ge profile

Keith, S.; Jungemann, C.; Decker, S.; Neinhus, B.; Bartels, M.; Meinerzhagen, B.
  • 作者Keith, S.; Jungemann, C.; Decker, S.; Neinhus, B.; Bartels, M.; Meinerzhagen, B.
  • 文件大小319.91KB
  • 发表时间1999
  • DOI10.1109/sispad.1999.799300
  • 页码219-222
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