Characterization of silicon-doped InP grown by solid-source molecular beam epitaxy using a valved phosphorus cracker cell

• 作者K Radhakrishnan; H.Q Zheng; P.H Zhang; S.F Yoon; G.I Ng
• 卷第204卷
• 期第3期
• 印刷ISSN0022-0248
• 文件大小188.22KB
• 发表时间1999
• DOI10.1016/s0022-0248(99)00214-6
• 页码275-281