Effect of growth interruption on the electrical and optical characteristics of InP/InGaAs HEMT structures

• 作者K Radhakrishnan; T.H.K Patrick; P.H Zhang; H.Q Zheng; S.F Yoon; A Raman
• 印刷ISSN0167-9317
• 文件大小181.35KB
• 发表时间2000
• DOI10.1016/s0167-9317(99)00493-1
• 页码433-440