Charge-collection characteristics of low-power ultrahigh speed, metamorphic AlSb/InAs high-electron mobility transistors (HEMTs)

McMorrow, D.; Boos, J.B.; Knudson, A.R.; Buchner, S.; Ming-Jey Yang, ; Bennett, B.R.; Melinger, J.S.

期刊名称IEEE Transactions on Nuclear Science
作者McMorrow, D.; Boos, J.B.; Knudson, A.R.; Buchner, S.; Ming-Jey Yang, ; Bennett, B.R.; Melinger, J.S.
卷第47卷
期第6期
印刷ISSN0018-9499
文件大小138.78KB
发表时间2000
DOI10.1109/23.903823
页码2662-2668

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