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[IEEE ICSE2000. 2000 IEEE International Conference on Semiconductor Electronics. - Guoman Port Dickson Resort, Malaysia (13-15 Nov. 2000)] ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425) - Growth study of wide bandgap a-Si:H and a-SiN:H by PECVD method for application in thin film transistor

[IEEE ICSE2000. 2000 IEEE International Conference on Semiconductor Electronics. - Guoman Port Dickson Resort, Malaysia (13-15 Nov. 2000)] ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425) - Growth study of wide bandgap a-Si:H and a-SiN:H by PECVD method for application in thin film transistor

Jasruddin, ; Wenas, W.W.; Winata, T.; Barmawi, M.
  • 作者Jasruddin, ; Wenas, W.W.; Winata, T.; Barmawi, M.
  • 文件大小283.32KB
  • 发表时间2000
  • DOI10.1109/smelec.2000.932472
  • 页码245-248
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