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[IEEE 2000 IEEE International SOI Conference. Proceedings - Wakefield, MA, USA (2-5 Oct. 2000)] 2000 IEEE International SOI Conference. Proceedings (Cat. No.00CH37125) - Co salicide technology for sub-0.15 μm FD-SOI and beyond: super-flat silicide and fully-silicided source/drain structure

[IEEE 2000 IEEE International SOI Conference. Proceedings - Wakefield, MA, USA (2-5 Oct. 2000)] 2000 IEEE International SOI Conference. Proceedings (Cat. No.00CH37125) - Co salicide technology for sub-0.15 μm FD-SOI and beyond: super-flat silicide and fully-silicided source/drain structure

Ichimori, T.; Hirashita, N.

作者Ichimori, T.; Hirashita, N.
文件大小165.15KB
发表时间2000
DOI10.1109/soi.2000.892775
页码72-73

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