High sensitivity measurement of implanted As in the presence of Ge in Ge[sub x]Si[sub 1−x]/Si layered alloys using trace element accelerator mass spectrometry

Datar, S. A.; Wu, Liying; Guo, B. N.; Nigam, M.; Necsoiu, D.; Zhai, Y. J.; Smith, D. E.; Yang, C.; Bouanani, M. E.; Lee, J. J.; McDaniel, F. D.

期刊名称Applied Physics Letters
作者Datar, S. A.; Wu, Liying; Guo, B. N.; Nigam, M.; Necsoiu, D.; Zhai, Y. J.; Smith, D. E.; Yang, C.; Bouanani, M. E.; Lee, J. J.; McDaniel, F. D.
卷第77卷
期第24期
印刷ISSN0003-6951
文件大小236.58KB
发表时间2000
DOI10.1063/1.1331093

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