Dislocation-free B-doped Si crystal growth without Dash necking in Czochralski method: influence of B concentration

• 作者Xinming Huang; Toshinori Taishi; Ichiro Yonenaga; Keigo Hoshikawa
• 卷第213卷
• 印刷ISSN0022-0248
• 文件大小229.01KB
• 发表时间2000
• DOI10.1016/s0022-0248(00)00356-0
• 页码283-287