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Band gap narrowing effect in Be-doped AlxGa1−xAs studied by photoluminescence spectroscopy

Band gap narrowing effect in Be-doped AlxGa1−xAs studied by photoluminescence spectroscopy

H.Q Zheng; H Wang; P.H Zhang; Z Zeng; K Radahakrishnan; S.F Yoon; G.I Ng
  • 作者H.Q Zheng; H Wang; P.H Zhang; Z Zeng; K Radahakrishnan; S.F Yoon; G.I Ng
  • 卷第44卷
  • 期第1期
  • 印刷ISSN0038-1101
  • 文件大小143.21KB
  • 发表时间2000
  • DOI10.1016/s0038-1101(99)00250-6
  • 页码37-40
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