High temperature characteristics of GaN-based heterojunction bipolar transistors and bipolar junction transistors
- 作者X.A Cao; J.M Van Hove; J.J Klaassen; C.J Polley; A.M Wowchack; P.P Chow; D.J King; F Ren; G Dang; A.P Zhang; C.R Abernathy; S.J Pearton
- 卷第44卷
- 期第4期
- 印刷ISSN0038-1101
- 文件大小509.24KB
- 发表时间2000
- DOI10.1016/s0038-1101(99)00291-9
- 页码649-654
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