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[IEEE 30th European Solid-State Device Research Conference - Cork, Ireland (2000.9.11-2000.9.13)] 30th European Solid-State Device Research Conference - Determination of the Recombination Lifetime in the Space Charge Region of MOS Field-Induced PN Junctions

[IEEE 30th European Solid-State Device Research Conference - Cork, Ireland (2000.9.11-2000.9.13)] 30th European Solid-State Device Research Conference - Determination of the Recombination Lifetime in the Space Charge Region of MOS Field-Induced PN Junctions

Sorge, R.; Heinemann, B.; Grabmeier, J.; Obermeier, G.; Richter, H.

作者Sorge, R.; Heinemann, B.; Grabmeier, J.; Obermeier, G.; Richter, H.
文件大小66.78KB
发表时间2000
DOI10.1109/essderc.2000.194820
页码484-487

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