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Si/SiO2Structures with Quantum Size Effects: The Construction of a Low-Dimensional Nanoscale Electronic System in the Interface Layer of Si by Incorporating a Regularly Distributed Charge into SiO2

Si/SiO2Structures with Quantum Size Effects: The Construction of a Low-Dimensional Nanoscale Electronic System in the Interface Layer of Si by Incorporating a Regularly Distributed Charge into SiO2

E. I. Gol'dman; Yu. V. Gulyaev; A. G. Zhdan; G. V. Chucheva

作者E. I. Gol'dman; Yu. V. Gulyaev; A. G. Zhdan; G. V. Chucheva
卷第30卷
期第5期
印刷ISSN1063-7397
电子ISSN1608-3415
文件大小39.63KB
发表时间2001-09
DOI10.1023/a:1011940712139
页码312-316

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