Low-temperature magnetoresistance due to weak localization in lightly doped semiconductorsA.I. Veinger; A.G. Zabrodskii; T.V. Tisnek; S.I. Goloshchapov · 2005

Anomalous Positive Microwave Magnetoresistance of Compensated Ge:Ga near the Metal–Insulator TransitionA.I. Veinger; A.G. Zabrodskii; T.V. Tisnek · 2002

Peculiarities of the Microwave Magnetoresistanc of Compensated Ge:As near the Metal--Insulator TransitionA.I. Veinger; A.G. Zabrodskii; T.V. Tisnek · 2000

Peculiarities of the quantum magnetoresistance effects in a heavily doped semiconductor at the microwave frequenciesA.I. Veinger; A.G. Zabrodskii; T.V. Tisnek; G. Biskupski · 1998

Base Peculiarities of the Electron Spin Resonance in the Vicinity of Insulator–Metal Transition in 4H-SiCA.I. Veinger; A.G. Zabrodskii; T.V. Tisnek; E.N. Mokhov · 2002

Spin-Peierls transition in the Ge:As semiconductor impurity system in the vicinity of the insulator–metal phase transitionA.I. Veinger; A.G. Zabrodskii; T.V. Tisnek; S.I. Goloshchapov · 2009