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A novel low-voltage content-addressable-memory (CAM) cell with a fast tag-compare capability using partially depleted (PD) SOI CMOS dynamic-threshold (DTMOS) techniques

A novel low-voltage content-addressable-memory (CAM) cell with a fast tag-compare capability using partially depleted (PD) SOI CMOS dynamic-threshold (DTMOS) techniques

Liu, S.C.; Wu, F.A.; Kuo, J.B.

作者Liu, S.C.; Wu, F.A.; Kuo, J.B.
卷第36卷
期第4期
文件大小162.66KB
发表时间2001
DOI10.1109/4.913752
页码712-716

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