MOS-gated thyristors (MCTs) for repetitive high power switching
- 期刊名称IEEE Transactions on Power Electronics
- 作者Bayne, S.B.; Portnoy, W.M.; Hefner, A.R.
- 卷第16卷
- 期第1期
- 印刷ISSN0885-8993
- 文件大小130.90KB
- 发表时间2001
- DOI10.1109/63.903997
- 页码125-131
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