Epitaxial Lateral Overgrowth of GaN on Silicon (111)
- 作者E. Feltin; B. Beaumont; P. Vennéguès; T. Riemann; J. Christen; J.P. Faurie; P. Gibart
- 卷第188卷
- 期第2期
- 印刷ISSN1862-6319
- 文件大小443.56KB
- 发表时间2001
- DOI10.1002/1521-396x(200112)188:2<733::aid-pssa733>3.0.co;2-f
- 页码733-737
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