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[JEDEC GaAs Reliability Workshop. - Baltimore, MD, USA (21 Oct. 2001)] 2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602) - Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design

[JEDEC GaAs Reliability Workshop. - Baltimore, MD, USA (21 Oct. 2001)] 2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602) - Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design

Menozzi, R.; Sozzi, G.; Verzellesi, G.; Borgarino, M.; Lanzieri, C.; Canali, C.
  • 作者Menozzi, R.; Sozzi, G.; Verzellesi, G.; Borgarino, M.; Lanzieri, C.; Canali, C.
  • 文件大小321.41KB
  • 发表时间2001
  • DOI10.1109/gaasrw.2001.995735
  • 页码89-95
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