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Recombination enhanced defect reactions in 1 MeV electron irradiated p InGaP

Recombination enhanced defect reactions in 1 MeV electron irradiated p InGaP

Khan, Aurangzeb; Yamaguchi, Masafumi; Bourgoin, Jacques C.; Ando, Koshi; Takamoto, Tatsuya
  • 期刊名称Journal of Applied Physics
  • 作者Khan, Aurangzeb; Yamaguchi, Masafumi; Bourgoin, Jacques C.; Ando, Koshi; Takamoto, Tatsuya
  • 卷第89卷
  • 期第8期
  • 印刷ISSN0021-8979
  • 文件大小351.34KB
  • 发表时间2001
  • DOI10.1063/1.1353806
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