Dopant-induced interface disorder in InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy
- 作者T Mozume; N Georgiev; H Yoshida
- 印刷ISSN0022-0248
- 文件大小221.16KB
- 发表时间2001
- DOI10.1016/s0022-0248(01)00775-8
- 页码577-581
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