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Numerical analysis for the effects of interface roughness on the attenuation amplitudes of Fowler–Nordheim tunneling current oscillations in ultrathin MOSFETs

Numerical analysis for the effects of interface roughness on the attenuation amplitudes of Fowler–Nordheim tunneling current oscillations in ultrathin MOSFETs

Lingfeng Mao; Heqiu Zhang; Jianlin Wei; Fuchen Mu; Changhua Tan; Mingzhen Xu
  • 作者Lingfeng Mao; Heqiu Zhang; Jianlin Wei; Fuchen Mu; Changhua Tan; Mingzhen Xu
  • 卷第45卷
  • 期第7期
  • 印刷ISSN0038-1101
  • 文件大小132.94KB
  • 发表时间2001
  • DOI10.1016/s0038-1101(01)00144-7
  • 页码1081-1084
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