Large enhancement of boron solubility in silicon due to biaxial stress

Sadigh, Babak; Lenosky, Thomas J.; Caturla, Maria-Jose; Quong, Andrew A.; Benedict, Lorin X.; Diaz de la Rubia, Tomas; Giles, Martin M.; Foad, Majeed; Spataru, Catalin D.; Louie, Steven G.

期刊名称Applied Physics Letters
作者Sadigh, Babak; Lenosky, Thomas J.; Caturla, Maria-Jose; Quong, Andrew A.; Benedict, Lorin X.; Diaz de la Rubia, Tomas; Giles, Martin M.; Foad, Majeed; Spataru, Catalin D.; Louie, Steven G.
卷第80卷
期第25期
印刷ISSN0003-6951
文件大小251.68KB
发表时间2002
DOI10.1063/1.1484557

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Large enhancement of boron solubility in silicon due to biaxial stress