Planar GaN n[sup +]–p photodetectors formed by Si implantation into p-GaN
- 期刊名称Applied Physics Letters
- 作者Sheu, J. K.; Lee, M. L.; Yeh, L. S.; Kao, C. J.; Tun, C. J.; Chen, M. G.; Chi, G. C.; Chang, S. J.; Su, Y. K.; Lee, C. T.
- 卷第81卷
- 期第22期
- 印刷ISSN0003-6951
- 文件大小321.80KB
- 发表时间2002
- DOI10.1063/1.1524689
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