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[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - Cu dual damascene interconnects with in-situ fluorinated carbon-nitride (FCN: -C=N(F)-) barrier layers in low-k organic film

[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - Cu dual damascene interconnects with in-situ fluorinated carbon-nitride (FCN: -C=N(F)-) barrier layers in low-k organic film

Ohtake, H.; Saito, S.; Tada, M.; Harada, Y.; Onodera, T.; Hayashi, Y.

作者Ohtake, H.; Saito, S.; Tada, M.; Harada, Y.; Onodera, T.; Hayashi, Y.
文件大小266.55KB
发表时间2002
DOI10.1109/iedm.2002.1175912
页码599-602

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