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Behavior of dislocations due to thermal shock in B-doped Si seed in Czochralski Si crystal growth

Behavior of dislocations due to thermal shock in B-doped Si seed in Czochralski Si crystal growth

Toshinori Taishi; Xinming Huang; Tiefeng Wang; Ichiro Yonenaga; Keigo Hoshikawa
  • 作者Toshinori Taishi; Xinming Huang; Tiefeng Wang; Ichiro Yonenaga; Keigo Hoshikawa
  • 卷第241卷
  • 期第3期
  • 印刷ISSN0022-0248
  • 文件大小240.82KB
  • 发表时间2002
  • DOI10.1016/s0022-0248(02)01246-0
  • 页码277-282
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