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Selective and deep plasma etching of SiO[sub 2]: Comparison between different fluorocarbon gases (CF[sub 4], C[sub 2]F[sub 6], CHF[sub 3]) mixed with CH[sub 4] or H[sub 2] and influence of the residence time

Selective and deep plasma etching of SiO[sub 2]: Comparison between different fluorocarbon gases (CF[sub 4], C[sub 2]F[sub 6], CHF[sub 3]) mixed with CH[sub 4] or H[sub 2] and influence of the residence time

Gaboriau, F.; Cartry, G.; Peignon, M-C.; Cardinaud, Ch.
  • 期刊名称Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
  • 作者Gaboriau, F.; Cartry, G.; Peignon, M-C.; Cardinaud, Ch.
  • 卷第20卷
  • 期第4期
  • 印刷ISSN0734-211X
  • 文件大小691.30KB
  • 发表时间2002
  • DOI10.1116/1.1495502
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