GaN p–n junction diode formed by Si ion implantation into p-GaN
- 作者M.L Lee; J.K Sheu; L.S Yeh; M.S Tsai; C.J Kao; C.J Tun; S.J Chang; G.C Chi
- 卷第46卷
- 期第12期
- 印刷ISSN0038-1101
- 文件大小215.66KB
- 发表时间2002
- DOI10.1016/s0038-1101(02)00224-1
- 页码2179-2183
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