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[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Technology modeling for emerging SOI devices

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Technology modeling for emerging SOI devices

Ieong, M.; Oldiges, P.
  • 作者Ieong, M.; Oldiges, P.
  • 文件大小477.93KB
  • 发表时间2002
  • DOI10.1109/SISPAD.2002.1034558
  • 页码225-230
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