[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Simulation of substrate currents
- 作者Schoenmaker, W.; Meuris, P.; Magnus, W.; Maleszka, B.
- 文件大小351.64KB
- 发表时间2002
- DOI10.1109/SISPAD.2002.1034521
- 页码79-82
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