10–15 nm Ultrashallow Junction Formation by Flash-Lamp Annealing
- 作者T. Ito; T. Iinuma; A. Murakoshi; H. Akutsu; K. Suguro; T. Arikado; K. Okumura; M. Yoshioka; T. Owada; Y. Imaoka; H. Murayama; T. Kusuda
- 文件大小210.44KB
- 发表时间2002
- DOI10.1143/JJAP.41.2394
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