![Impact of program/erase operation on the performances of oxide-based resistive switching memory]()
Impact of program/erase operation on the performances of oxide-based resistive switching memoryWang, Guoming; Long, Shibing; Yu, Zhaoan; Zhang, Meiyun; Li, Yang; Xu, Dinglin; Lv, Hangbing; Liu, Qi; Yan, Xiaobing; Wang, Ming; Xu, Xiaoxin; Liu, Hongtao; Yang, Baohe; Liu, Ming · Nanoscale Research Letters · 2015