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Photoluminescence and photoreflectance characterization of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy

Photoluminescence and photoreflectance characterization of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy

T Mozume; N Georgiev
  • 作者T Mozume; N Georgiev
  • 卷第13卷
  • 印刷ISSN1386-9477
  • 文件大小103.79KB
  • 发表时间2002
  • DOI10.1016/s1386-9477(01)00558-6
  • 页码361-365
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