[IEEE Proceedings of the 2002 14th International Conference on Ion Implantation Technology - Taos, New Mexico, USA (2002.9.22-2002.9.27)] Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on - The effect of sub-1000°C source/drain anneal temperature on transistor in conventional SiO₂ integration and high-k dielectric integration

• 作者Jae Eun Lim, Jae Eun Lim; Yudong Kim, Yudong Kim; Torres, K.; Bersuker, G.; Brown, G.; Bennett, J.; Foran, B.; Larson, L.
• 文件大小1736.10KB
• 发表时间2002
• DOI10.1109/iit.2002.1257943
• 页码79-82