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[IEEE 53rd Electronic Components and Technology Conference, 2003. - New Orleans, Louisiana, USA (May 27-30, 2003)] 53rd Electronic Components and Technology Conference, 2003. Proceedings. - Thermal modeling and measurement of AlGaN/GaN FETs built on sapphire and SiC substrates

[IEEE 53rd Electronic Components and Technology Conference, 2003. - New Orleans, Louisiana, USA (May 27-30, 2003)] 53rd Electronic Components and Technology Conference, 2003. Proceedings. - Thermal modeling and measurement of AlGaN/GaN FETs built on sapphire and SiC substrates

Jeong Park, ; Kakovitch, D.; Moo whan Shin, ; Chin C. Lee,

作者Jeong Park, ; Kakovitch, D.; Moo whan Shin, ; Chin C. Lee,
文件大小545.98KB
发表时间2003
DOI10.1109/ectc.2003.1216314
页码438-442

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