The stationary Monte Carlo method for device simulation. II. Event biasing and variance estimation
- 期刊名称Journal of Applied Physics
- 作者Nedjalkov, M.; Kosina, H.; Selberherr, S.
- 卷第93卷
- 期第6期
- 印刷ISSN0021-8979
- 文件大小353.34KB
- 发表时间2003
- DOI10.1063/1.1544655
Theoretical analysis of ultrafast pump-probe experiments in semiconductor amplifiersGirndt, A.; Knorr, A.; Hofmann, M.; Koch, S. W. · Applied Physics Letters · 1995
Measurement and calculation of gain spectra for (GaIn)As/(AlGa)As single quantum well lasersEllmers, C.; Girndt, A.; Hofmann, M.; Knorr, A.; Rühle, W. W.; Jahnke, F.; Koch, S. W.; Hanke, C.; Korte, L.; Hoyler, C. · Applied Physics Letters · 1998
Electro-rheologyBlock, H; Kelly, J P · Journal of Physics D: Applied Physics · 1988
Semiconductor nanowiresLu, Wei; Lieber, Charles M · Journal of Physics D: Applied Physics · 2006
Nanoassembled model catalystsHeiz, Ueli; Schneider, Wolf-Dieter · Journal of Physics D: Applied Physics · 2000
Mechanisms for exchange biasStamps, R L · Journal of Physics D: Applied Physics · 2000
Thermal plasma waste treatmentHeberlein, Joachim; Murphy, Anthony B · Journal of Physics D: Applied Physics · 2008
Surface enhanced fluorescenceFort, Emmanuel; Grésillon, Samuel · Journal of Physics D: Applied Physics · 2008
Nanocomposite dielectrics—properties and implicationsNelson, J K; Hu, Y · Journal of Physics D: Applied Physics · 2005
Memristor-based neural networksThomas, Andy · Journal of Physics D: Applied Physics · 2013