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Comment on “Electronic structure of the high-temperature Ge(0 0 1) surface studied by valence band photo-emission” [Surface Science 537 (2003) L423–L428]

Comment on “Electronic structure of the high-temperature Ge(0 0 1) surface studied by valence band photo-emission” [Surface Science 537 (2003) L423–L428]

Bene Poelsema; Esther van Vroonhoven; Harold J.W. Zandvliet

作者Bene Poelsema; Esther van Vroonhoven; Harold J.W. Zandvliet
卷第547卷
期第3期
印刷ISSN0039-6028
文件大小242.76KB
发表时间2003
DOI10.1016/j.susc.2003.10.034
页码452-456

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