Scanning tunneling microscopy study of GaAs overgrowth on InAs islands formed on GaAs(0 0 1)
- 作者Shigehiko Hasegawa; Osamu Suekane; Masahiro Takata; Hisao Nakashima
- 卷第251卷
- 印刷ISSN0022-0248
- 文件大小462.61KB
- 发表时间2003
- DOI10.1016/s0022-0248(02)02403-x
- 页码161-165