Modeling of the gate leakage current reduction in MOSFET with ultra-thin nitrided gate oxide

C.W. Yang; Y.K. Fang; S.F. Ting; C.H. Chen; W.D. Wang; T.Y. Lin; M.F. Wang; M.C. Yu; C.L. Chen; L.G. Yao; S.C. Chen; C.H. Yu; M.S. Liang

作者C.W. Yang; Y.K. Fang; S.F. Ting; C.H. Chen; W.D. Wang; T.Y. Lin; M.F. Wang; M.C. Yu; C.L. Chen; L.G. Yao; S.C. Chen; C.H. Yu; M.S. Liang
卷第47卷
期第4期
印刷ISSN0038-1101
文件大小194.42KB
发表时间2003
DOI10.1016/s0038-1101(02)00357-x
页码751-754

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