Lateral composition modulation in strain compensated (GaInP)m(GaInAs)m short-period superlattices grown on (0 0 1) InP by atomic layer molecular beam epitaxy
D. Golmayo; M.L. Dotor; C. Quintana
- 作者D. Golmayo; M.L. Dotor; C. Quintana
- 卷第253卷
- 印刷ISSN0022-0248
- 文件大小320.96KB
- 发表时间2003
- DOI10.1016/s0022-0248(03)01094-7
- 页码167-173