Dependence of carrier concentrations on oxygen pressure for Ga-doped ZnO prepared by ion plating method
- 作者T. Yamamoto; T. Sakemi; K. Awai; S. Shirakata
- 印刷ISSN0040-6090
- 文件大小97.06KB
- 发表时间2004
- DOI10.1016/j.tsf.2003.10.138
- 页码439-442
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