AlGaN–GaN HEMTs on Si With Power Density Performance of 1.9 W/mm at 10 GHz

Minko, A.; Hoel, V.; Morvan, E.; Grimbert, B.; Soltani, A.; Delos, E.; Ducatteau, D.; Gaquiere, C.; Theron, D.; De Jaeger, J.C.; Lahreche, H.; Wedzikowski, L.; Langer, R.; Bove, P.; Bove, P.

期刊名称IEEE Electron Device Letters
作者Minko, A.; Hoel, V.; Morvan, E.; Grimbert, B.; Soltani, A.; Delos, E.; Ducatteau, D.; Gaquiere, C.; Theron, D.; De Jaeger, J.C.; Lahreche, H.; Wedzikowski, L.; Langer, R.; Bove, P.; Bove, P.
卷第25卷
期第7期
印刷ISSN0741-3106
文件大小128.17KB
发表时间2004-07
DOI10.1109/LED.2004.830272
页码453-455

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AlGaN–GaN HEMTs on Si With Power Density Performance of 1.9 W/mm at 10 GHz