[IEEE Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - Honolulu, HI, USA (2004.06.17-2004.06.17)] Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - Highly reliable, 65 nm-node Cu dual damascene interconnects with full porous-SiOCH (k=2.5) films for low-power ASICs
Ueki, M.; Narihiro, M.; Ohtake, H.; Tagami, M.; Tada, M.; Ito, F.; Harada, Y.; Abe, M.; Inoue, N.; Arai, K.; Takeuchi, T.; Saito, S.; Onodera, T.; Furutake, N.; Hiroi, M.; Sekine, M.; Hayashi, Y.
- 作者Ueki, M.; Narihiro, M.; Ohtake, H.; Tagami, M.; Tada, M.; Ito, F.; Harada, Y.; Abe, M.; Inoue, N.; Arai, K.; Takeuchi, T.; Saito, S.; Onodera, T.; Furutake, N.; Hiroi, M.; Sekine, M.; Hayashi, Y.
- 文件大小204.01KB
- 发表时间2004
- DOI10.1109/vlsit.2004.1345393
- 页码60-61