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[IEEE 2004 International Semiconductor Conference. CAS 2004 - Sinaia, Romania (4-6 Oct. 2004)] 2004 International Semiconductor Conference. CAS 2004 Proceedings (IEEE Cat. No.04TH8748) - Gate oxides on 4H-SiC substrates grown or annealed in N/sub 2/O/Ar mixture

[IEEE 2004 International Semiconductor Conference. CAS 2004 - Sinaia, Romania (4-6 Oct. 2004)] 2004 International Semiconductor Conference. CAS 2004 Proceedings (IEEE Cat. No.04TH8748) - Gate oxides on 4H-SiC substrates grown or annealed in N/sub 2/O/Ar mixture

Perez-Tomas, A.; Godignon, P.; Tournier, D.; Mestres, N.; Millan, J.

作者Perez-Tomas, A.; Godignon, P.; Tournier, D.; Mestres, N.; Millan, J.
卷第2卷
文件大小268.32KB
发表时间2004
DOI10.1109/smicnd.2004.1403009
页码333-336

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